Growth of heterostructures on InAs for high mobility device applications
Identifieur interne : 000C28 ( Main/Repository ); précédent : 000C27; suivant : 000C29Growth of heterostructures on InAs for high mobility device applications
Auteurs : RBID : Pascal:13-0288262Descripteurs français
- Pascal (Inist)
- Mécanisme croissance, Hétérostructure, Arséniure d'indium, Semiconducteur III-V, Composé III-V, Nucléation, Défaut surface, Homoépitaxie, Couche tampon, Propriété transport, Microscopie force atomique, Epitaxie jet moléculaire, Composé ternaire, Composé de l'indium, Nitrure de calcium, Arséniure d'aluminium, InAs, Substrat InAs, AlAsxSb1-x, AlAs, 8110A, 6460Q, 8115H.
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Abstract
The growth of heterostructures lattice matched to InAs(100) substrates for high mobility electronic devices has been investigated. The oxide removal process and homoepitaxial nucleation depends on the deposition parameters to avoid the formation of surface defects that can propagate through the structure during growth which can result in degraded device performance. The growth parameters for InAs homoepitaxy were found to be within an extremely narrow range when using As4 with a slight increase using As2. High structural quality lattice matched AlAsxSb1-x buffer layer was grown on InAs(100) substrates using a digital growth technique with the AlAs mole fraction adjusted by varying the incident As flux. Using the AlAsxSb1-x buffer layer, the transport properties of thin InAs channel layers were determined on conducting native substrates.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Growth of heterostructures on InAs for high mobility device applications</title><author><name sortKey="Contreras Guerrero, R" uniqKey="Contreras Guerrero R">R. Contreras-Guerrero</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, Texas State University</s1><s2>San Marcos, TX 78666</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>15 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>San Marcos, TX 78666</wicri:noRegion></affiliation></author><author><name sortKey="Wang, S" uniqKey="Wang S">S. Wang</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>TSMC R&D, Europe B.V.</s1><s2>3001 Leuven</s2><s3>BEL</s3><sZ>2 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ></inist:fA14><country>Belgique</country><wicri:noRegion>3001 Leuven</wicri:noRegion></affiliation></author><author><name sortKey="Edirisooriya, M" uniqKey="Edirisooriya M">M. Edirisooriya</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, Texas State University</s1><s2>San Marcos, TX 78666</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>15 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>San Marcos, TX 78666</wicri:noRegion></affiliation></author><author><name sortKey="Priyantha, W" uniqKey="Priyantha W">W. Priyantha</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, Texas State University</s1><s2>San Marcos, TX 78666</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>15 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>San Marcos, TX 78666</wicri:noRegion></affiliation></author><author><name sortKey="Rojas Ramirez, J S" uniqKey="Rojas Ramirez J">J. S. Rojas-Ramirez</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, Texas State University</s1><s2>San Marcos, TX 78666</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>15 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>San Marcos, TX 78666</wicri:noRegion></affiliation></author><author><name sortKey="Bhuwalka, K" uniqKey="Bhuwalka K">K. 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Holland</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>TSMC R&D, Europe B.V.</s1><s2>3001 Leuven</s2><s3>BEL</s3><sZ>2 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ></inist:fA14><country>Belgique</country><wicri:noRegion>3001 Leuven</wicri:noRegion></affiliation></author><author><name sortKey="Oxland, R" uniqKey="Oxland R">R. Oxland</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>TSMC R&D, Europe B.V.</s1><s2>3001 Leuven</s2><s3>BEL</s3><sZ>2 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ></inist:fA14><country>Belgique</country><wicri:noRegion>3001 Leuven</wicri:noRegion></affiliation></author><author><name sortKey="Vellianitis, G" uniqKey="Vellianitis G">G. Vellianitis</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>TSMC R&D, Europe B.V.</s1><s2>3001 Leuven</s2><s3>BEL</s3><sZ>2 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ></inist:fA14><country>Belgique</country><wicri:noRegion>3001 Leuven</wicri:noRegion></affiliation></author><author><name sortKey="Van Dal, M" uniqKey="Van Dal M">M. Van Dal</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>TSMC R&D, Europe B.V.</s1><s2>3001 Leuven</s2><s3>BEL</s3><sZ>2 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ></inist:fA14><country>Belgique</country><wicri:noRegion>3001 Leuven</wicri:noRegion></affiliation></author><author><name sortKey="Duriez, B" uniqKey="Duriez B">B. Duriez</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>TSMC R&D, Europe B.V.</s1><s2>3001 Leuven</s2><s3>BEL</s3><sZ>2 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ></inist:fA14><country>Belgique</country><wicri:noRegion>3001 Leuven</wicri:noRegion></affiliation></author><author><name sortKey="Passlack, M" uniqKey="Passlack M">M. Passlack</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>TSMC R&D, Europe B.V.</s1><s2>3001 Leuven</s2><s3>BEL</s3><sZ>2 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ></inist:fA14><country>Belgique</country><wicri:noRegion>3001 Leuven</wicri:noRegion></affiliation></author><author><name sortKey="Diaz, C H" uniqKey="Diaz C">C. H. Diaz</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>TSMC R&D, Hsinchu Science Park</s1><s2>Hsinchu 300</s2><s3>TWN</s3><sZ>14 aut.</sZ></inist:fA14><country>Taïwan</country><wicri:noRegion>Hsinchu 300</wicri:noRegion></affiliation></author><author><name sortKey="Droopad, R" uniqKey="Droopad R">R. Droopad</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, Texas State University</s1><s2>San Marcos, TX 78666</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>15 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>San Marcos, TX 78666</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0288262</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0288262 INIST</idno><idno type="RBID">Pascal:13-0288262</idno><idno type="wicri:Area/Main/Corpus">000831</idno><idno type="wicri:Area/Main/Repository">000C28</idno></publicationStmt><seriesStmt><idno type="ISSN">0022-0248</idno><title level="j" type="abbreviated">J. cryst. growth</title><title level="j" type="main">Journal of crystal growth</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium arsenides</term><term>Atomic force microscopy</term><term>Buffer layer</term><term>Calcium nitride</term><term>Growth mechanism</term><term>Heterostructures</term><term>Homoepitaxy</term><term>III-V compound</term><term>III-V semiconductors</term><term>Indium arsenides</term><term>Indium compounds</term><term>Molecular beam epitaxy</term><term>Nucleation</term><term>Surface defect</term><term>Ternary compounds</term><term>Transport properties</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Mécanisme croissance</term><term>Hétérostructure</term><term>Arséniure d'indium</term><term>Semiconducteur III-V</term><term>Composé III-V</term><term>Nucléation</term><term>Défaut surface</term><term>Homoépitaxie</term><term>Couche tampon</term><term>Propriété transport</term><term>Microscopie force atomique</term><term>Epitaxie jet moléculaire</term><term>Composé ternaire</term><term>Composé de l'indium</term><term>Nitrure de calcium</term><term>Arséniure d'aluminium</term><term>InAs</term><term>Substrat InAs</term><term>AlAsxSb1-x</term><term>AlAs</term><term>8110A</term><term>6460Q</term><term>8115H</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The growth of heterostructures lattice matched to InAs(100) substrates for high mobility electronic devices has been investigated. The oxide removal process and homoepitaxial nucleation depends on the deposition parameters to avoid the formation of surface defects that can propagate through the structure during growth which can result in degraded device performance. The growth parameters for InAs homoepitaxy were found to be within an extremely narrow range when using As<sub>4</sub> with a slight increase using As<sub>2</sub>. High structural quality lattice matched AlAs<sub>x</sub>Sb<sub>1-x</sub> buffer layer was grown on InAs(100) substrates using a digital growth technique with the AlAs mole fraction adjusted by varying the incident As flux. Using the AlAs<sub>x</sub>Sb<sub>1-x </sub>buffer layer, the transport properties of thin InAs channel layers were determined on conducting native substrates.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0022-0248</s0></fA01><fA02 i1="01"><s0>JCRGAE</s0></fA02><fA03 i2="1"><s0>J. cryst. growth</s0></fA03><fA05><s2>378</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Growth of heterostructures on InAs for high mobility device applications</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>The 17th International Conference on Molecular Beam Epitaxy</s1></fA09><fA11 i1="01" i2="1"><s1>CONTRERAS-GUERRERO (R.)</s1></fA11><fA11 i1="02" i2="1"><s1>WANG (S.)</s1></fA11><fA11 i1="03" i2="1"><s1>EDIRISOORIYA (M.)</s1></fA11><fA11 i1="04" i2="1"><s1>PRIYANTHA (W.)</s1></fA11><fA11 i1="05" i2="1"><s1>ROJAS-RAMIREZ (J. S.)</s1></fA11><fA11 i1="06" i2="1"><s1>BHUWALKA (K.)</s1></fA11><fA11 i1="07" i2="1"><s1>DOORNBOS (G.)</s1></fA11><fA11 i1="08" i2="1"><s1>HOLLAND (M.)</s1></fA11><fA11 i1="09" i2="1"><s1>OXLAND (R.)</s1></fA11><fA11 i1="10" i2="1"><s1>VELLIANITIS (G.)</s1></fA11><fA11 i1="11" i2="1"><s1>VAN DAL (M.)</s1></fA11><fA11 i1="12" i2="1"><s1>DURIEZ (B.)</s1></fA11><fA11 i1="13" i2="1"><s1>PASSLACK (M.)</s1></fA11><fA11 i1="14" i2="1"><s1>DIAZ (C. H.)</s1></fA11><fA11 i1="15" i2="1"><s1>DROOPAD (R.)</s1></fA11><fA12 i1="01" i2="1"><s1>AKIMOTO (Katzuhiro)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>SUEMASU (Takashi)</s1><s9>ed.</s9></fA12><fA12 i1="03" i2="1"><s1>OKUMURA (Hajime)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Department of Physics, Texas State University</s1><s2>San Marcos, TX 78666</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>15 aut.</sZ></fA14><fA14 i1="02"><s1>TSMC R&D, Europe B.V.</s1><s2>3001 Leuven</s2><s3>BEL</s3><sZ>2 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ></fA14><fA14 i1="03"><s1>TSMC R&D, Hsinchu Science Park</s1><s2>Hsinchu 300</s2><s3>TWN</s3><sZ>14 aut.</sZ></fA14><fA15 i1="01"><s1>University of Tsukuba</s1><s3>JPN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA15><fA20><s1>117-120</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13507</s2><s5>354000506550350300</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>8 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0288262</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of crystal growth</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>The growth of heterostructures lattice matched to InAs(100) substrates for high mobility electronic devices has been investigated. The oxide removal process and homoepitaxial nucleation depends on the deposition parameters to avoid the formation of surface defects that can propagate through the structure during growth which can result in degraded device performance. The growth parameters for InAs homoepitaxy were found to be within an extremely narrow range when using As<sub>4</sub> with a slight increase using As<sub>2</sub>. High structural quality lattice matched AlAs<sub>x</sub>Sb<sub>1-x</sub> buffer layer was grown on InAs(100) substrates using a digital growth technique with the AlAs mole fraction adjusted by varying the incident As flux. Using the AlAs<sub>x</sub>Sb<sub>1-x </sub>buffer layer, the transport properties of thin InAs channel layers were determined on conducting native substrates.</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A10A</s0></fC02><fC02 i1="02" i2="3"><s0>001B60D60Q</s0></fC02><fC02 i1="03" i2="3"><s0>001B80A15H</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Mécanisme croissance</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Growth mechanism</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Mecanismo crecimiento</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Hétérostructure</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Heterostructures</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Arséniure d'indium</s0><s2>NK</s2><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Indium arsenides</s0><s2>NK</s2><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Semiconducteur III-V</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>III-V semiconductors</s0><s5>04</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Composé III-V</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>III-V compound</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Compuesto III-V</s0><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Nucléation</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Nucleation</s0><s5>06</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Défaut surface</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Surface defect</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Defecto superficie</s0><s5>07</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Homoépitaxie</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Homoepitaxy</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Homoepitaxia</s0><s5>08</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Couche tampon</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Buffer layer</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Capa tampón</s0><s5>09</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Propriété transport</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Transport properties</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Propiedad transporte</s0><s5>10</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Microscopie force atomique</s0><s5>11</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Atomic force microscopy</s0><s5>11</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Epitaxie jet moléculaire</s0><s5>12</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Molecular beam epitaxy</s0><s5>12</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Composé ternaire</s0><s5>13</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Ternary compounds</s0><s5>13</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Composé de l'indium</s0><s5>14</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Indium compounds</s0><s5>14</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>Nitrure de calcium</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="ENG"><s0>Calcium nitride</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="SPA"><s0>Calcio nitruro</s0><s5>15</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Arséniure d'aluminium</s0><s2>NK</s2><s5>16</s5></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Aluminium arsenides</s0><s2>NK</s2><s5>16</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>InAs</s0><s4>INC</s4><s5>46</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Substrat InAs</s0><s4>INC</s4><s5>47</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>AlAsxSb1-x</s0><s4>INC</s4><s5>48</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>AlAs</s0><s4>INC</s4><s5>49</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>8110A</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="22" i2="3" l="FRE"><s0>6460Q</s0><s4>INC</s4><s5>72</s5></fC03><fC03 i1="23" i2="3" l="FRE"><s0>8115H</s0><s4>INC</s4><s5>73</s5></fC03><fN21><s1>273</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>MBE2012 International Conference on Molecular Beam Epitaxy</s1><s2>17</s2><s3>Nara JPN</s3><s4>2012-09-23</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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